Que Duanlin has been engaged in the research of semiconductor materials for a long time. He was the first to carry out research on preparing pure silicon by silane method and high-purity silane in China. Responsible for and leading the development of high-purity and extremely high-resistance silicon single crystal, and successfully developed extremely high-resistance detector-grade silicon single crystal.
Que Duanlin trial-produced China's first thermoelectric generator; first successfully developed ultra-high resistance detector grade silicon single crystal using silane method in China; first proposed using nitrogen as protective gas to pull silicon single crystal crystal technology to produce high-quality and low-cost silicon single crystal; developed the theory and technology of monochromatic infrared photoconductivity attenuation life testing, and presided over the development of test instruments whose technical indicators are much better than similar imported instruments, making silicon single crystal industrial product life testers domestically produced change.
Research results: Purification of silane by full molecular sieve adsorption method, high-frequency 1.09μm infrared photoconductivity attenuation silicon single crystal minority carrier lifetime tester, decompression nitrogen-filled Czochralski silicon single crystal technology. Que Duanlin has published more than 50 important papers. Obtained 8 Chinese invention patents.
Main publications
1: Que Duanlin, a method of manufacturing Czochralski (Chesch) silicon single crystal using nitrogen protective atmosphere, Chinese invention patent, CN85100295B (authorized).
2: Que Duanlin, manufacturing method of heavily antimony-doped silicon single crystal, Chinese invention patent, CN86100854B (authorized).
3: Que Duanlin, gas phase nitrogen doping method for Czochralski silicon single crystal, Chinese invention patent, CN1003607B (authorized).
4: Que Duanlin, a method for preparing micro-nitrogen, low-oxygen, low-carbon Czochralski silicon single crystal, Chinese invention patent, CN1003797B (authorized).
5: Que Duanlin, method for controlling the amount of nitrogen in Czochralski silicon single crystal, Chinese invention patent, CN1040400A (authorized).
6: Que Duanlin, Infrared light source silicon single crystal minority carrier lifetime tester, Journal of Zhejiang University, 1982, 3.
7: Que Duanlin, high-frequency 109μ infrared photoconductivity attenuation method to test the non-equilibrium interceptor lifetime of silicon single crystal, Journal of Zhejiang University, 1985, 2.
8: Que Duanlin, high-resistance detector grade silicon single crystal, rare metal 1987, 60.
9: Que Duanlin, High-resistance silicon low-temperature ohmic contact, Journal of Semiconductors, 1988, 9(2).
10: Que Duanlin, Nitrogen Concentration in CZ Silicon Crystals Grown under Nitrogen Atmosphere, Proceedings of 2th International Conference on Solid State and IC Te chnology, Beijing, 1989.
11: Que Duanlin , Research on silicon single crystal for power transistors grown in nitrogen protective atmosphere, Journal of Zhejiang University, 1990, 24(3).
12: Que Duanlin, Czochralski Silicon Crystal Growth in Ntrogen Atmosphere Under Reduced Pressure, Science in China (Series A), 1991 .
13: Que Duanlin, Annealing behavior of NN pairs in nitrogen-containing CZSi, Journal of Semiconductors, 1991, 12(4).
14: Que Duanlin, Thermal acceptor in micronitrogen silicon single crystal, Journal of Semiconductors, 1991, 12(8).
15: Que Duanlin, "Silicon Materials" in Encyclopedia of China·Electronics and Computers.
16: Oue Duanlin, Czochralski Silicon Crystal Growth in Nitrogen Atmosphere under Reduced Pressure, Science in China (Series A), 1991, 34(8): 1017～1024.
17 ：Que Duanlin, Surface Recmbination Correction Formula for Measuring Minority Carrier Lifetime in Silicon Crystals by Monochromatic Light Photoconductive Decay , Chinese Journal of Electronics, 1994, 3(4): 76～78.
18：Que Duanlin , Oxygen Precipitate of New Morphology in Nitrogen Doped Silicon , Progress in Natural Science, 1994, 3(2): 176～180.
19: Que Duanlin, Nitrogen Effects on Thermal Donor and Shallow Thermal Donor in Silico n, JApplPhys, 1995,77(2): 933.
20: Que Duanlin, Effect of Nitrogenoxygen Complex on Electrical Properties of Czoch ralski Silicon, ApplPhysLett., 1996, 68(4): 487. Que Duanlin He opened more than 10 new courses including "Semiconductor Materials" for the first time. As the founder of the semiconductor materials discipline of Zhejiang University, he led the discipline to become one of the first batch of master's degree awarding points approved by the Academic Degrees Committee of the State Council and the first doctoral degree in semiconductor materials engineering. Awarding point, it was rated as a national key discipline in 1988; in 1987, it was approved to build the National Key Laboratory of High Purity Silicon and Silane. Under Que Duanlin's training through example and words, his students all have strong scientific research and experimental abilities. Many students have grown into business backbones and leaders of various units. Such as Professor Yang Deren.
He has successively opened more than 10 courses for undergraduates and graduate students, including "Electrical Materials", "Semiconductor Materials", "Semiconductor Monographs", "Vacuum Technology", "Semiconductor Physics", and "Fundamentals of Modern Physics" Several courses, many of which were developed by him by first collecting information without textbooks or even systematic reference books.