(1) Enhancement type linear gradient doped GaAs planar Gunn diode and its manufacturing method
Huang Jie, Yang Hao, Dong Junrong, Wu Rufei, Zhang Haiying
Invention patent: 2009.11.24, application number: 200910238762.4
(2) A linear gradient doped GaAs planar Gunn diode and its manufacturing method
Huang Jie, Yang Hao, Dong Junrong, Wu Rufei, Zhang Haiying
Invention patent: 2009.11.24, application number: 200910238764.9
(3) Frequency multiplier based on left- and right-hand composite nonlinear transmission lines
Yang Hao, Wu Rufei, Dong Junrong, Huang Jie, Zhang Haiying
Invention patent: 2009.04.22, application number: 200910082090.2
(4) A GaAs Schottky varactor diode And its production method
Dong Junrong, Yang Hao, Wu Rufei, Huang Jie
Invention patent: 2009.06.17, application number: 200910087347.3