What should I do if IGBT fails? What methods are there to test IGBT?

In my work, I often encounter the problem of IGBT failure, but if I want to analyze the reasons of IGBT failure, I don't know what to do. Sometimes it is necessary to judge whether the IGBT module with good appearance is abnormal, and what method should be used to test it?

Generally speaking, you can choose to use a digital multimeter to quickly judge the quality of IGBT. Test whether FWD chip is normal with the diode gear of multimeter; Judge whether CE, ge and GC are short-circuited by resistance file; Use the capacitance file to test whether the door is normal. However, these methods can only be used as a preliminary means of discrimination and are not universal. If we want to judge the cause of IGBT failure more accurately, we need to use special test equipment.

IGBT full dynamic parameter testing equipment is a professional testing equipment developed and manufactured by Shenzhen Weiyujia Intelligent Control Co., Ltd., which can test the dynamic parameters of SiC IGBT, such as turn-on, turn-off, short circuit, gate charging, diode reverse recovery and so on. At the same time, it can also test IGBT modules and DBC in most packages such as single tube, half bridge, four core, six core and PIM.

The test equipment is semi-automatic, can automatically load and unload materials, and has the functions of automatic short circuit test and Qg test. The maximum voltage and current specifications are 2000V/2000A, and the maximum short-circuit current is 5000A A. Higher voltage and current specifications can be customized according to users' needs. The test fixture adopts crimping mode, with small connection inductance, plug and play, convenient fixture replacement and compatibility with various packaging modules and DBC. In addition, the device adopts an overcurrent protection mechanism combining software and hardware, and the protection speed is fast (

Shenzhen Weiyujia is a test equipment research and development and manufacturing enterprise with IGBT, MOSFET and SiC as main power semiconductors. The IGBT dynamic test equipment (1500V/2000A) developed by this company is the first in China and has been applied in batches by many large IGBT power semiconductor module manufacturers in China. The company became the first manufacturer of IGBT dynamic test equipment for electric vehicles in China, and passed ISO900 1 quality system certification, and obtained many patents and software copyrights.

The products developed and manufactured by the company include IGBT dynamic parameter testing equipment, PIM&; We have continuously developed special dynamic equipment for single-tube IGBT, static parameter test equipment for IGBT, power semiconductor test platform, high-voltage safety test box, adjustable hollow inductor and automatic test equipment for dynamic and static parameters. It is possible to meet more new technical requirements of power semiconductor detection and application.