An N-type differential electric field microsensor for electric field testing is characterized by consisting of an N-channel electric field sensor (ENMOS 1), an N-channel depletion type metal oxide semiconductor transistor (ENMOS'2), a P-type metal oxide semiconductor transistor current mirror and an N-type metal oxide semiconductor transistor (NMOS5). P-type metal oxide semiconductor transistor current mirror consists of two P-type metal oxide semiconductor transistors (PMOS3 and PMOS4), the source of which is connected to power supply (Vdd), the gate of which is interconnected and connected to the drain of one of the P-type metal oxide semiconductor transistors (PMOS3), and the drain of the P-type metal oxide semiconductor transistor (PMOS3) is connected to the drain of an N-channel electric field sensor (ENMOS 1). The drain of the other P-type MOS transistor (PMOS4) is connected with the drain of the N-channel depletion MOS transistor (ENMOS'2), and this node is used as the output terminal (Vout). The source of the N-channel electric field sensor (ENMOS 1) is connected with the source of the N-channel depletion MOS transistor (ENMOS'2) and the drain of the N-type MOS transistor (NMOS5). The source of the N-type metal oxide semiconductor transistor (NMOS5) is grounded (Vss), and the gate of the N-type metal oxide semiconductor transistor (NMOS5) is connected to the bias voltage (Vb).
This product was patented in 2005.
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