Being the first to discover the modulation phenomenon of AlGaN/GaN heterojunction two-dimensional electron gas by fluorine ions, and put forward a physical explanation; based on this new discovery, we successfully developed high-performance enhanced AlGaN/GaN HEMTs. Developed new GaN-based monolithic integration technology and developed a GaN-based DCFL circuit that can operate normally at a high temperature of 375°C. Invented a new technology that uses chemical mechanical polishing (CMP) to realize vertical structure high-power GaN LED. He has published more than 30 academic papers in domestic and foreign professional journals and conferences, applied for six US patents, two of which are in the announcement period, and applied for two Chinese patents.