Explanation of specific meaning:
For example: SAMSUNGK4H280838B-TCB0
Main meaning:
Bit 1- chip function k stands for memory chip.
Bit 2-Chip Type 4 stands for DRAM.
The third bit-further description of the chip type, S stands for SDRAM, H stands for DDR, and G stands for SGRAM.
4th and 5th digits-capacity and refresh rate. Memory with the same capacity will use different refresh rates and different numbers. 64, 62, 63, 65, 66, 67 and 6A represent the capacity of 64Mbit; 28, 27 and 2A represent the capacity of 128Mbit; 56, 55, 57 and 5A represent a capacity of 256Mbit; 5 1 represents the capacity of 5 12Mbit.
6th and 7th bits —— the number of data line pins, and 08 represents 8-bit data; 16 stands for 16 bit data; 32 represents 32-bit data; 64 denotes 64-bit data.
Bit 1 1- connects "-".
Bits 14 and15-the speed of the chip, for example, 60 means 6 ns70 or 7 ns7B means 7.5 ns (Cl = 3); 7C is 7.5ns (cl = 2); 80 is 8 ns 10 or 10ns(66MHz).
Knowing the meaning of the main numbers of the memory particle code, it is very easy to calculate the capacity of the memory stick after getting it. For example, a Samsung DDR memory encapsulates 18 SAMSUNGK4H280838B -TCB0 particles. The 4th and 5th bits of the grain number "28" mean that the grain is 128Mbits, and the 6th and 7th bits "08" mean that the grain has 8-bit data bandwidth, so we can calculate that the capacity of the memory bank is 128Mbits (megabits) ×16chips/8bits =.
Note: "bit" is "digit" and "b" is byte“byte ".If a byte is 8 bits, divide it by 8. Regarding the calculation of memory capacity, there are two cases in the example given in this paper: one is non-ECC memory, and every eight particles with 8-bit data width can form a memory; In another ECC, an 8-bit ECC check code is added after every 64 bits of data. Through the check code, two errors in memory data can be detected and one error can be corrected. Therefore, in the process of calculating the actual capacity, the parity bit is not calculated, and the actual capacity of the memory bank with ECC function of 18 particles is multiplied by 16. At the time of purchase, it can also be determined that the memory bank of 18 or 9 memory granule patch is ECC memory.
Hynix (Modern)
"8" is the memory chip structure, which means that the memory consists of 8 chips. (4=4 chips; 8=8 chips; 16= 16 chips; 32=32 chips)
"2" refers to the bank of memory. (1=2 bank; 2=4 banks; 3=8 banks)
"2" indicates that the interface type is SSTL_2. ( 1 = SSTL _ 3； 2 = SSTL _ 2； 3=SSTL_ 18)
"B" is the core code of the third generation. (Blank = 65438 generation+0; A= second generation; B= the third generation; C= 4th generation)
Energy consumption, blank represents ordinary; L stands for low power consumption, and the energy consumption code of this memory stick is empty, so it is ordinary.
The packaging type is indicated by "T", that is, TSOP packaging. (T = TSOP； q = LOFP； f = FBGA； FC=FBGA)
Packet stack, blank = normal; S = Hynix; K = M & ampt； J= other; M=MCP (Hynix); MU=MCP(UTC), and the memory above is blank, representing a common package stack.
Packaging raw materials, blank = ordinary; P= lead; H = halogen; R= lead+halogen. The memory is made of common packaging materials.
"D43" means that the memory speed is DDR400. (D43=DDR400，3-3-3； D4=DDR400，3-4-4； J = DDR333M=DDR333，2-2-2； K = DDR266AH = DDR266BL=DDR200)
Working temperature is generally omitted. I= industrial normal temperature (-40 ~ 85 degrees); E= expansion temperature (-25 ~ 85 degrees)
The significance of modern memory:
HY5DV64 1622AT-36
HYXXXXXXXXXXXXXXXX
123456789 10 1 1 12
1 and HY stand for modern products.
2. Memory chip type: (57=SDRAM, 5d = DDR SDRAM); );
3. Processing technology and working voltage: (blank = 5vvdd = 3.3v &; VDDQ = 2.5VVDD = 2.5V & amp； VDDQ = 2.5VVDD = 2.5V & amp； VDDQ = 1.8V； VDD = 1.8V & amp； VDDQ= 1.8V)
4. Chip capacity density and refresh rate: 16= 16Mbits, 4KRef；; 64: 64m4k refresh; 64=64Mbits, 8KRef65=64Mbits, 4KRef66: 64m2k refresh; 28: 128m4k refresh; 128= 128Mbits, 8kref129 =128mbits, 4KRef56: 256 m8k refresh; 57: 256 m4k refresh; 256=256Mbits、 16 kref； 257=256Mbits, 8KRef 12: 5 12M8k refresh; 1g: 1g 8k refresh
5. Width of data bits representing chip output: 40, 80, 16 and 32 represent 4 bits, 8 bits, 16 bits and 32 bits respectively.
6. Number of banks: 1, 2 and 3 represent 2, 4 and 8 banks respectively, which is the power of 2.
7.I/O interface:1:sstl _ 3,2: sstl _ 2.
8. Chip kernel version: it can be blank or letters such as A, B, C and D.. The later, the newer the kernel.
9. Represents power consumption: L= low-power chip, blank = ordinary chip.
10, memory chip package form: JC=400milSOJ, TC = 400 mil TSOP-II, TD = 13 mm TSOP-II, TG = 16 mm TSOP-II.
1 1, working speed: 55: 183MHZ, 5:200MHZ, 45:222MHZ, 43:233MHZ, 4:250MHZ, 33:300 MHz, L:DDR200, H: DDR 200.
Modern mBGA encapsulated particles
Infineon (Infineon)
Infineon is a subsidiary of Siemens in Germany. At present, Infineon, a subsidiary of Siemens, only produces two kinds of storage particles in the domestic market: particles with a capacity of 128Mbits and particles with a capacity of 256Mbits. The number details the capacity and data width of its memory. Infineon's memory queue organization and management mode is that each particle consists of four banks. So its memory particle model is relatively small, and it is also the easiest to distinguish.
HYB39S 128400 means 128MB/4bits, and "128" means the particle capacity, and the last three digits mean the data width of the memory. The same is true of others, such as: HYB39S 128800, that is,128mb/8bits; HYB39S 128 160 is128mb/16bits; HYB39S256800 is 256 MB/8 bits.
The working rate of Infineon memory particles is expressed by adding a short line at the end of its model and then marking the working rate.
-7.5- indicates that the working frequency of the memory is133mhz; ;
-8- indicates that the working frequency of the memory is 100MHz.
For example:
1 Kingston memory stick is produced by 16 Infineon HYB39S 128400-7.5 memory granules. Its capacity is calculated as: 128Mbits × 16 chips /8=256MB (megabits).
1 Ramaxel memory chip is produced by 8 Infineon HYB39S 128800-7.5 memory particles. Its capacity is calculated as: 128 megabits× 8 chips /8 = 128 megabits.
Jin max, kti
KINGMAX memory description
Kingmax memory is all encapsulated in Tiny BGA (TinyBGA (Tinyballgridarray). Moreover, the packaging method is a patented product, so we see that the memory chips of Kingmax particles are all produced by the factory itself. Kingmax memory granules have two capacities: 64Mbits and128 bits. You can list the memory granularity model of each capacity series here.
Capacity remarks:
Ksva 44t 4a0a-64mbits, 16M address space ×4-bit data width;
Ksv884t 4a0a-64mbits, 8M address space× 8-bit data width;
Ksv244t4xxx- 128mbits, 32M address space ×4-bit data width;
Ksv684t4xxx- 128mbits, 16M address space× 8-bit data width;
Ksv864t4xxx- 128Mbits, 8m address space × 16 bit data width.
The working rate of Kingmax memory has four states, which are separated by a short line symbol after the model to identify the working rate of the memory:
-7A——PC 133/CL = 2；
-7——PC 133/CL = 3；
-8A——PC 100/CL = 2；
-8——PC 100/CL=3 .
For example, a Kingmax memory stick consists of 16 KSV884T4A0A-7A, and its capacity is calculated as: 64Mbits × 16 /8= 128MB (megabytes).
Micron (micron)
The coding rules of Meguiar's memory are illustrated by the number MT48LC 16M8A2TG-75.
Meaning:
Mt- Meguiar's manufacturer name.
Type 48 memory. 48 stands for SDRAM；; 46 stands for DDR.
LC- supply voltage. LC stands for 3v; C stands for 5v; V stands for 2.5V
16M8—— The granularity memory capacity is 128Mbits, and the calculation method is: 16M (address) ×8-bit data width.
A2- Memory kernel version number.
TG packaging method, TG is TSOP packaging.
-75- the working speed of the memory, that is,133mhz; ; -65 means 150MHz.
For example, MicronDDR memory stick consists of 18 particles with the number of MT46V32M4-75. Memory supports ECC function. So each bank is an odd number of storage particles.
Its capacity calculation is: capacity 32M×4bit× 16 chip /8=256MB (megabytes).
Winbond (Winbond)
Description of meaning:
WXXXXXXXX
12345
1 and w indicate that memory particles are produced by Winbond.
2. Representative memory types: 98 is SDRAM and 94 is DDRRAM.
3. Represents the version number of particles: common version numbers are B and H;
4. stands for package, H is TSOP package, B is BGA package and D is LQFP package.
5. Working frequency: 0: 10 ns,100mhz; ; 8:8ns、 125 MHz； Z:7.5ns、 133 MHz； Y:6.7ns、 150 MHz； 6:6ns、 166 MHz； 5:5 nanoseconds, 200 MHz
Moser language (Taiwan Province province, Maosi language)
Taiwan Bay Mosi Technology is a big manufacturer of memory chips in Taiwan Province Province, and it doesn't supply much to the mainland, so we are not familiar with it. The number of this particle is V54C365 164VDT45. Numbers 6 and 7 are 65, which means that a single particle is 64/8 = 8mb. From the numbers 8 and 9, the bit width of a single particle is 16bit, which shows that the particle velocity is 4.5ns.
South Asia, elixir, PQI, PLUSS, Atl, EUDAR
Nanya technology is the sixth largest memory chip manufacturer in the world, and the only profitable company in Taiwan Province Province last year, ranking fifth in the world. The memory number is NT5S5V8 M 16CT -7K, in which the fourth letter "s" represents SDRAM memory, the 6th and 7th bits 8 M represent single particle capacity 8M, the 8th and 9th bits 16 represent single particle bit width 16bit, and -7K represents speed 7ns.
Which one, Mr. Si Tong, Ray and Kim?
M.tec (diligence), TwinMOS (diligence)
V-DATA (Hong Kong Victoria Harbour), A-DATA (Taiwan Province Victoria Harbour), VT
The memory particle number is VDD8608A8A-6B H0327, which is a 6-nanosecond particle with a capacity of ***256M. 0327 indicates that its production date is the 27th week of 2003.
A data
This is DDR500 of A-Data.