2065438+0 1 June 10, James Goodman, an independent inventor from Texas, sued six manufacturers, led by semiconductor leader Intel and Japanese manufacturer Elpida, for infringing1patent. The whole case is currently being investigated by the Federal District Court of Northern California.
The patent number in dispute is US 6,243,315. The inventor and patentee of this patent are both James Goodman, which mainly involves the power control design of memory devices. James Goodman believes that using this patented technology can improve two characteristics of memory, namely, low energy consumption and high efficiency.
According to James Goodman's statement in the complaint, the PSRAM (pseudo SRAM) products produced by six defendant manufacturers, including Intel, all infringed the No.315 patent. At present, the three main memory types in the mobile phone and handheld device market are DRAM, SRAM (synchronous RAM) and PSRAM. Because of its DRAM architecture and external interface of SRAM, PSRAM itself can also be regarded as a combination of two kinds of memories. Its competitive advantage lies in its large memory capacity and low production cost. 16Mb PSRAM is even cheaper than 8Mb SRAM. In addition, PSRAM is also one of the memory groups currently equipped with iPhone.