Semiconductor photoresists are classified according to the wavelength of exposure light source, including ultraviolet full spectrum (300 ~ 450 nm), G line (436nm), I line (365nm), deep ultraviolet (DUV, including 248nm and 193nm) and extreme ultraviolet (EUV), and photoresists corresponding to various exposure wavelengths are also produced. Generally speaking, the shorter the wavelength, the better the processing resolution.
Photoresist corresponding to each exposure wavelength is also generated. Generally speaking, the shorter the wavelength, the better the processing resolution. At present, photoresists used in semiconductors are mainly divided into five categories: G-line photoresists, I-line photoresists, KrF photoresists, ArF photoresists and EUV photoresists.
ArF and KrF photoresist
By the end of 1990s, the semiconductor manufacturing technology had developed below 350mm, and G-line and I-line photoresists could not meet this demand, so KrF photoresists with 248nm wavelength light source and ArF photoresists with 193nm wavelength light source appeared. All belong to deep ultraviolet photoresist, which is qualitatively different from G line and I line.
In the following 20 years, ArF photoresist has been the most reliable and widely used lithography light source in the field of semiconductor manufacturing. After 2 1 century, with the help of new technologies such as immersion lithography and multiple lithography, ArF lithography system broke through the bottleneck of the previous resolution of 65nm, and ArF lithography technology is still widely used in semiconductor manufacturing processes between 45nm and 10nm. ?
At present, the mainstream process of foreign fabs is 14nm, and the process of SMIC, a leading foundry enterprise in Chinese mainland, is 28 mm Although Samsung and TSMC also have processes below 10nm, they have not been widely used.