Features: 1, using high heat dissipation coefficient material-Si as the substrate, easy heat dissipation.
conductivity for heat
GaAs: 46/m-g
Gap: 77 W/m-K
Silicon: 125 ~ 150 W/m-K
Copper: 300~400 W/m-g
Silicon carbide: 490 W/m-g
2. The wafer is bonded to the epitaxial layer and the substrate through the metal layer, and at the same time, photons are reflected to avoid absorption by the substrate.
3. instead of GaAs substrate, conductive silicon substrate has good thermal conductivity (thermal conductivity difference is 3~4 times), which is more suitable for the field of high driving current. 4. The metal reflective layer at the bottom is beneficial to improve luminosity and heat dissipation.
5. The size can be increased, and it can be used in the field of high power. (for example: 42mil MB definition: GB chip: adhesive chip; This chip is a patented product of UEC.
Features: 1: transparent sapphire substrate replaces light-absorbing GaAs substrate, and the optical output power is more than twice that of traditional As (absorbable structure) chip. Sapphire substrate is similar to GaP substrate of TS chip.
2: The chip shines on all sides, and the pattern is excellent.
3. In terms of brightness, its overall brightness has exceeded the level of ts chip (8.6mil).
4. Dual-electrode structure, its high current resistance is slightly worse than the clarity and characteristics of ts single-electrode TS chip.
Definition: TS chip: transparent structure chip, which belongs to HP's patented product.
Features: 1. Chip technology is complex, much higher than LED.
2. Excellent reliability
3. Transparent GaP substrate, which does not absorb light and has high brightness.
4. Widely used
Definition: AS chip: Absorbable structure chip; After nearly 40 years of development efforts, the R&D and the production and sales of this type of chips in the LED photoelectric industry in Taiwan Province Province are in a mature stage, which is basically at the same level as that of major R&D companies, with little difference. The mainland chip manufacturing industry started late, and there is still a certain gap between brightness and reliability and Taiwan Province industry. What we are discussing here is. As the chip of UEC, especially as the chip of UEC, for example: 7 12Sol-VR, 709sol-VR, 7 12Sym-VR, 709sym-VR, etc.
Features: 1. Four chips, manufactured by MOVPE technology, are brighter than traditional chips.
2. Excellent reliability
3. Widely used 1, LPE: GaP/GaP.
2.VPE: gas phase epitaxy (gas Xiang Lei crystal method) GaAsP/GaAs.
3.MOVPE: Metal-organic vapor phase epitaxy (organic metal gas Xiang Lei crystallization method) AlGaInP, GaN.
4.SH: GaAlAs/GaAs single heterostructure (single heterostructure) GaAlAs/GaAs.
5.DH: GaAlAs/GaAs double heterostructure, (double heterostructure) GaAlAs/GaAs.
6.DDH: GaAlAs/GaAlAs double heterostructure.