1, China Suzhou Nengxun
Founded in 2007, Nengxun Semiconductor adopts the integrated design and manufacturing (IDM) mode to independently develop gallium nitride material growth, chip design, wafer technology, package testing, reliability and application circuit technology.
Main products: GaN RF power transistor, wireless communication GaN RF power amplifier tube and GaN HEMT tube.
Core technology and application: Nengxun GaN power amplifier tube products have high output efficiency and high gain under broadband signals, and are simple to apply, which is suitable for ultra-wideband power amplifier applications of LTE, 4G, 5G and other mobile communications.
Gallium nitride HEMT chip can support customers' ultra-wideband applications in the DC-6GHz range, with industry-leading power density, efficiency and reliability, and is suitable for compact RF amplifier modules and general or personal communication subsystems.
2. Suzhou Zhan Jing
Founded on 20 12, located in Suzhou Nano City, it is dedicated to the research and development and industrialization of GaN epitaxial materials. ? Up to now, Zhan Jing Semiconductor has completed the A+ round of financing and expanded its production scale.
Products: gallium nitride on silicon, gallium nitride on silicon carbide and gallium nitride on sapphire.
Technology and application: silicon-based, sapphire-based and silicon carbide-based gallium nitride epitaxial wafer products have extremely high electron mobility and two-dimensional electron gas concentration, and extremely small buffer layer leakage. Used in microwave radio frequency and power electronics; At present, 6-inch and 8-inch silicon-based gallium nitride wafer materials can be provided.
3. Zhuhai Innovation and Technology
Established on 20 15 and 12, it introduced SGOS technology from American Innoseco company.
Products: single-tube gallium nitride field effect transistor, half-bridge gallium nitride field effect transistor and gallium nitride integrated circuit.
Technology and application: 8-inch silicon-based gallium nitride industrialization platform, with perfect gallium nitride epitaxial growth, gold-free silicon CMOS compatible process manufacturing, and its own reliability testing and failure analysis capabilities. It is used in lidar, wireless charging and fast charging, data center, 5G communication, artificial intelligence and new energy vehicles.
4. Chongqing Huarun Micro
Founded in 2000, the company is the only one of the top ten semiconductor enterprises in China in 2065438+2008, mainly operating in IDM mode.
Products: 8-inch silicon-based gallium nitride production line, the first 8-inch 600 V/10GaN power device product technology and application in China: focusing on power semiconductors and smart sensors, providing customers with a series of semiconductor products and services.
5. Hangzhou Slanwei
Established in September, 1997, and headquartered in Hangzhou, China.
Products listed in 2003: A well-known IDM enterprise in China built a 6-inch silicon-based gallium nitride power device pilot line.
6. Chongqing Juli City
We were founded in 2065438+September 2008, and established GaN-on-Si epitaxial wafer base in Dazu District of Chongqing.
Products: GaN-on-Si and GaN-on-SiC epitaxial wafer materials, GaN power devices.
Technology and application: At present, GLC is building the first phase of GaN-on-Si epitaxial wafer factory in Dazu District, Chongqing. Now the epitaxial wafer has entered the mass production stage. The whole project plans to build a production line with an annual output of 6.5438+200,000 GaN epitaxial wafers and a production line with an annual output of 360,000 GaN chips.
7. Taiwan Province integrated circuit manufacturing industry
Established in 1987 and 20 19, Taiji Company and its subsidiaries have and manage annual production capacity exceeding 12 million wafers12 inch wafers.
Product technology: 6-inch gallium nitride silicon.
8. Sanan Group
Founded in June 2000, 1 1, located in Xiamen.
Products: 650 volts 0.5 micron gallium nitride/silicon, 200 volts/100 volts 0.5 micron gallium nitride/silicon.
Technology and application: Sanan integrated GaN e-HEMT technology serves consumer and industrial applications, such as adapter/charger, telecom/server smp, wireless power supply, vehicle charger (OBC) and cost-effective solutions.
9. Suzhou Jiexinwei
Founded on 20 13, Haigui was founded in Suzhou Industrial Park, and Jiexinwei subsidiary has 100 domestic and foreign invention patents in the field of gallium nitride power electronics technology. Patent layout includes materials, devices, processes and applications; The region covers China, the United States, Europe and Japan.
Products: silicon-based gallium nitride power electronic devices and sapphire-based gallium nitride power electronic devices technology and application: 650V GaN FET, BVds≥650V, IDS > 10A, ON resistance Ron < 0.15Ω. It can be used in PFC, DC-DC, DC-AC, AC-DC, wireless power transmission, power adapter, wireless power supply and fast charging.
Sapphire-based gallium nitride high-voltage protection switching device with single-tube withstand voltage exceeding 2000V, with single-tube withstand voltage of 2000V, on-resistance lower than1Ω in the on state and leakage lower than 1uA/mm in the off state.
10, Dalian core crown
201June March 17 was established in Dalian High-tech Zone, and the company adopted the business model of Integrated Design and Manufacturing (IDM).
Products: silicon-based gallium nitride epitaxial wafer, silicon-based gallium nitride power electronic device.
Technology and application: Build the first 6-inch silicon-based gallium nitride epitaxial and power device wafer production line. 2065438+March 2009, COVID-19 Science and Technology took the lead in introducing 650 volt silicon-based gallium nitride power devices in China (passed the 1000 hour HTRB reliability test) and officially put them on the market.