Xenon lamp is also called HID gas discharge headlamp in the field of automobile lamps. High-pressure xenon wrapped in quartz tube is used to replace the traditional tungsten wire to provide higher color temperature and more concentrated lighting. Because xenon lamp is a beam of arc light formed by activating xenon with high voltage current, it can continuously discharge and emit light between two electrodes. The power of ordinary automobile tungsten bulb reaches 55 watts, while xenon lamp only needs 35 watts, which is reduced by nearly one and a half. Xenon lamp can obviously reduce the load of vehicle power system. The color temperature of automobile xenon lamp is between 4 K and 6 K, which is much higher than that of ordinary headlight bulbs. It has high brightness. The light color of the 43K xenon lamp is white and yellowish. Because of its low color temperature, the visual effect is yellowish, and the light penetration is stronger than that of the high color temperature lamp, which can improve the driving safety at night and in foggy weather.
The main production processes of xenon lamps include silicon wafer preparation, IC preparation and four-stage packaging, and each process also includes complicated electronic processes. For example, IC manufacturing is a process of forming circuits on and inside silicon wafers, including more than 35 manufacturing processes such as oxidation, photolithography, diffusion, epitaxial growth, metallization, passivation, back grinding, back metallization and dicing, which takes 6-8 weeks to complete. In the floodlight production process, besides the silicon wafer, more than 35 processes are completed by chemical substances in the factory, such as cleaning or preparing the surface of the silicon wafer with wet chemical solution and ultra-pure water, doping the silicon wafer with high-energy ions to obtain P-type and N-type silicon materials, depositing different metal conductor layers and a necessary dielectric layer between conductor layers, growing a thin silicon dioxide layer as the main gate dielectric material of the device, selectively removing the materials with plasma enhancer or wet reagent and forming the required materials on the thin film. These chemicals are in the form of gas, liquid and solid.