199 1 Graduated from the Department of Electronic Science of Jilin University with a bachelor's degree in engineering. After graduation, I worked in Dalian Yuanguang Electronics Co., Ltd. (Dalian Development Zone, China), a Sino-Korean joint venture, mainly responsible for the research and development of semiconductor light-emitting diodes (LEDs) and the transformation of production lines.
1April, 1994, I went to the National Nagoya Institute of Technology in Japan to study electrical information engineering (E.E.) and studied under Professor Takashi Shinbao. /kloc-0 obtained the master's degree in engineering in March, 1998 and the doctor's degree in engineering in March, 2000/kloc-0. During this period, I mainly engaged in MOCVD growth of III-V compound semiconductor materials such as GaAs-based and GaN-based and related optoelectronic devices. During my doctoral studies, I was also employed as a research assistant (RA) and a teaching assistant (TA) to guide the graduation research of undergraduates and master students.
From April 5438+0, 2006 to April 2004, I worked in Fujitsu Quantum Devices Company (Japan Jiafu), which is the largest compound semiconductor manufacturer in the world. During this period, I mainly engaged in the chip and module design and mass production of InP-based photodetectors for 10Gp/s and 40Gp/s ultra-high-speed optical communication systems.
Since May 2004, I have been employed by the State Key Laboratory of Optoelectronic Materials and Technology of Sun Yat-sen University as a second-class talent of the "Hundred Talents Program", engaged in the research and teaching of optoelectronic compound semiconductor materials and related devices.