Samsung Electronics said on August 30th that the first batch of D-RAM products have been produced in Pyeongtaek No.2 Semiconductor Factory with a building area of 16 football field (128,900 square meters). The factory will be responsible for the production of the first cutting-edge third generation 10 nanometer (1z) LPDDR5 mobile D-RAM product with EUV (extreme ultraviolet lithography) technology in the semiconductor industry.
Samsung Electronics said, "Starting from mass production of D-RAM products, Pyeongtaek No.2 Factory will also build a new generation of VNAD and ultra-fine OEM product production lines, and become a high-tech integrated production factory, which will play a central role in opening the gap of semiconductor technology for the company in the fourth industrial revolution era."
In order to meet the market demand for cutting-edge products of EUV process, Samsung Electronics started to build an OEM production line in Pyeongtaek No.2 Plant in May this year, and started to build a NAND flash semiconductor production line in June to meet the market demand for cutting-edge V NAND products. These two assembly lines will be put into production in the second half of 20021.
After Samsung Electronics announced its investment plan of 180 trillion won in August, 20 18 and created 40,000 jobs, it began to invest in the construction of the second factory in Pyeongtaek.
Following the Pyeongtaek 1 plant, it is estimated that the total investment scale of the Pyeongtaek 2 plant will reach more than 30 trillion won. Among them, Samsung Electronics will directly employ 4,000 people, including its suppliers, other partners and builders, and * * * will create more than 30,000 jobs.
Pingze 1 factory started construction in 20 15, covering an area of 2.89 million square meters, and was put into production in June 20 17.
16Gb LPDDR5 mobile D-RAM product produced by Pingze No.2 Factory is the first memory chip mass-produced by EUV technology. Samsung Electronics said that this product has the largest capacity and the fastest running speed in the world, and it is the first third-generation 10 nm (1z) LPDDR5 product in the industry.
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