Chinese name: Jiang Dachuan Nationality: China Graduate School: Dalian University of Technology Degree/Education: Doctor's work experience, education experience, research field, representative thesis, work achievement, work experience: 20 14.06- Lecturer, School of Materials Science and Engineering, Dalian University of Technology: 2012.06-20/kloc- 4.06 Postdoctoral education experience: 2006.09-20 12.06 Research on preparing solar-grade polysilicon by electron beam melting: Research on directional purification technology of polysilicon: Master's research direction: metallurgical manufacturing of solar-grade polysilicon; Regenerative manufacturing of solar-grade polysilicon materials: representative paper 1. Jiang Dachuan, Ren Shiqiang, Shuang Shi, Wei Dong, Qiu Jieshan, Li Jiayan: Removal of Phosphorus from Silicon by Vacuum Refining and Directional Solidification, Journal of Electronic Materials, 48 (2) (2014) 319. 2. Zhang Lei, Jiang Dachuan, Li Yaqiong: Study on boron removal from polysilicon with calcium-aluminum-silicon-fluorine slag, vacuum, 103 (20 14) 33-37. M Noor Ulhuda Khan Asghar, Shi Shuang, Jiang Dachuan, Qin Shiqiang, Jiao Liao, Wen Shutao, Wei Dong,: Removing oxygen from silicon by electron beam melting, Applied Physics A,115 (3) (2014) 753-. 4. Ren Shiqiang, Shuang Shi, Wen Shutao, Jiang Dachuan, Wei Dong, Mingji, Sun Shihai: Removal of Aluminum and Calcium from Polycrystalline Silicon by Directional Solidification by Vacuum Induction Melting, Vacuum, 99 (20 14) 272-276 .5., Qin Shiqiang, Wen Shutao,, Shuang Shi, Jiang Dachuan,. 6. Jiang Dachuan, Shuang Shi, Pang Dayu, Wei Dong: Study on the Distribution of Aluminum in Electron Beam Melting Silicon Ingots, Vacuum, 96 (20 13) 27-3 1. 7. Tan Yi, Shuangshi, Jiang Dachuan, Wei Dong, Ren Shiqiang: Effect of cooling rate on solidification of silicon ingot by electron beam melting, vacuum, 89 (2013)12-16. 8. Shu Taowen, Shuang Shi, Jiang Dachuan, Wei Dong,: Numerical simulation of optimization of process parameters for purifying silicon by electron beam melting, vacuum, 95 (20 13) 18-24. 9. Shi Shuang, Wei Dong, Jiang Dachuan,: Evaporation and removal mechanism of phosphorus on the surface of silicon melt during electron beam melting, Applied Surface Science, 266(3) (20 13) 344-349. 10. Shu Taowen, Shuang Shi, Wei Dong, Jiang Dachuan, Jiao Liao, Contact Thermal Resistance of Silicon and Copper Crucibles during Electron Beam Melting, International Thermal Science, 74 (20 13) 37-43. 1 1. Tan Yi,, Shuangshi, Wei Dong, Jiang Dachuan: Study on Silicon Removal by Electron Beam Melting, Vacuum, 93 (20 13) 65-70. 12. Jiang Dachuan, Shuang Shi, Wei Dong, Zheng Gu, Zou Ruixun: Removal of Phosphorus from Silicon Melt by Electron Beam Candle Melting, Materials Communication, 78 (20 12) 4-7. 13. Jiang Dachuan, Shuang Shi, Wei Dong, Zheng Gu,: Removal of evaporated aluminum and calcium from directionally solidified silicon for solar cells by electron beam candle melting, vacuum, 86 (10) (2012)14/kloc-0. 14. Jiang Dachuan,, Shuangshi,, Wei Dong, Zheng Gu, Zou Ruixun: Study on the new method of removing phosphorus from silicon melt by electron beam candle melting, innovation in material research,15 (6) (201) 406-409. 15. Xu Peng, Wei Dong, Jiang Dachuan: Removing aluminum from metallurgical grade silicon by electron beam melting, vacuum, 86 (4) (2011) 471-475. 16. Wang Qiang, Wei dong, Jiang dachuan, Zhang Cong,: evaporation of impurities in metallurgical grade silicon during electron beam melting, rare metals, 30 (3) (2011) 274-277. Work achievement project: 1. Project leader of National Natural Science Foundation for Youth Fund, "Study on Reverse Induced Spring Effect of Directional Solidification of Polycrystalline Silicon" II. Project Leader of China Postdoctoral Science Fund "Research on Reverse Induction Spring Technology for Directional Purification of Polycrystalline Silicon" 3. There are 4 participants in the National Science and Technology Support Program "Key Technology Research and Industrialization Demonstration of Preparing Solar Grade Polycrystalline Silicon by Metallurgical Method". National natural science foundation joint project "research on vacuum refining in preparing solar-grade polysilicon by metallurgical method" national participant 5. The winners of the National Natural Science Foundation project "Study on the Influence of Electron Beam Implantation of Polysilicon Si on the Migration of Impurity Boron at the Interface of SiO2 _ 2":1.201365438+The second prize of the technology and application of preparing solar polysilicon materials by electron beam in Liaoning Province in February was 2.201.6544. Technology and patent application: 1. * * Ting, Jiang Dachuan, Ren Shiqiang, Shi Shuang. A polycrystalline silicon ingot casting process with bottom compensation of boron element, application number: CN 201410123650.52. Tan Yi. Jiang Dachuan. A polycrystalline silicon ingot casting process with uniformly distributed boron, application number: CN 201410123795.53. Jiang Dachuan, Ren Shiqiang, Shi Shuang, Tan Yi, Qiu Jieshan. Vacuum solid-liquid separation method and equipment for high-purity hollow silicon material and polycrystalline silicon ingot. Application number: CN201310209897.44. Jiang Dachuan, Ren Shiqiang, Shi Shuang, * * * Ting,. A rapid solidification method of polysilicon, application number: CN201310533033.85. Tan Yi. The application number: cn 201310210007.16. Tan Yi, Jiang Dachuan, Shi Shuang, Wen Shutao, Zou Ruixun. A radiation intercepting device for an electron beam melting crucible, application number: CN20 1365438. * * * Ting。 A device and method for reverse solidification of polycrystalline silicon, application number: CN201310530845.78. Li Jiayan, Tan Yi, Li Yaqiong, Jiang Dachuan, Wang Dengke, Zhang Lei. Boron-removing slagging agent for polysilicon medium melting and its application method, application number: CN 2065438. Li Jiayan, Wang Dengke, Zhang Lei, Jiang Dachuan, Li Yaqiong. A slagging agent for boron removal in polysilicon medium smelting and its application method, the application number is CN 201310337756.010. Tan Yi, Shi Shuang, Ren Shiqiang, Jiang Dachuan. Vacuum solid-liquid separation of polycrystalline silicon ingot. The application number: cn 201310210006.711. Tan Yi, Li Jiayan, Zhang Lei, Li Yaqiong, Wang Dengke, Jiang Dachuan. A slagging agent for melting polysilicon medium and its application method, application number: CN 201310337930.12. , Jiang Dachuan, Shi Shuang, Liao Jiao, Shi. A method for preparing tungsten electrode material by electron beam melting, application number: CN20 12 1058. Guo Xiaoliang. A method for removing impurities by electron beam-induced directional solidification, application number: CN 201210289971.314. , Shi Shuang, You Xiaogang, Jiang Dachuan, Shi. A preparation method of rare earth tungsten electrode material, application number: CN 201210576414. X15. , Liu Yingkuan, Sheng, Shi Shuang, Liu Zhenyuan, Dong Wei, Jiang Dachuan. The invention relates to a method and equipment for purifying polysilicon by electron beam melting under a high-purity silicon substrate, and the application number is CN 20110220767.116. Tan Yi, Jiang Dachuan, Dong Wei, Guo Xiaoliang, Zheng Gu, Pang Dayu, Shi Shuang. Method and equipment for removing phosphorus and metal impurities from silicon powder by vacuum induction melting, patent number: ZL 20110033792.917. Tan Yi, Jiang Dachuan, Dong Wei, Zheng Gu, Xu Peng. A method for removing boron from industrial silicon, patent number: ZL 20 10 10242656. Jiang Dachuan, Zou Ruixun, Dong Wei. A method for removing boron impurities from polysilicon by electron beam implantation, patent number: ZL 201010242065.919. Tan Yi, Zou Ruixun, Zheng Gu, Dong Wei, Jiang Dachuan. An electron beam gradient melting purification method. Patent number: ZL 201010247815.120. Tan Yi, Dong Wei, Jiang Dachuan, Li Guobin. Method and device for removing boron from polysilicon by local evaporation, patent number: ZL 200910220058.621+. Jiang Dachuan. Method and device for removing phosphorus and boron from polysilicon by continuous smelting, patent number: ZL2009 10220059.0 22. Tan Yi, Jiang Dachuan, Li Guobin, Xu Fumin, Liu Yanjiao and Hu Zuqi. A method for purifying polysilicon by chemical metallurgy, patent number: ZL 2008 10065438. Li Guobin, Jiang Dachuan, Zhang Cong. A method and device for removing impurity phosphorus from polysilicon, patent number: ZL 200810011949.624. Tan Yi, Li Guobin, Jiang Dachuan, Xu Fumin, Wang Qiang. Method and device for removing impurity phosphorus and metal impurities in polysilicon, patent number: ZL 2000.