In the early 1970s, Zou Shichang, who had been criticized by the "Cultural Revolution", returned to his research job. At this time, his research field had shifted to studying the interaction between ion beams and solid materials and their application in semiconductors. Applications in materials and devices. At that time, the "Cultural Revolution" was still going on, and the available equipment was the first 200,000 electron volt energy ion implanter manufactured in China, and its performance was very unstable. Zou Shichang first participated in the later part of the threshold voltage control of CMOS integrated circuits (electronic watch frequency dividers). This was the first time that ion implantation was applied to semiconductor integrated circuits in China. In 1974, he cooperated with the Shanghai Institute of Atomic Nuclear Research to configure a beam collimator and a precision angler on the ion implanter, and established a backscattered energy spectrum measurement and channel effect analysis system, which was applied to the surface layer component concentration of ion implanted semiconductors. The distribution measurement, lattice damage analysis and doping atom lattice positioning were completed in 1975. The research work on neon ion backside implantation damage to absorb heavy impurities in silicon to improve the reverse leakage characteristics of p-n junction was completed. In September of the same year, Zou Shichang published this paper at the "Ion Beam Surface Analysis" international academic conference in Karlsruhe, West Germany, which aroused praise from international peers. What surprised them was that China actually completed experiments on self-made equipment that generally require the use of energy accelerators and precision instruments with more than one million electron volts in the world. This is China's first paper published in the international academic community that uses ion backscattered energy spectroscopy analysis to conduct semiconductor research. In 1978, he cooperated with Shanghai Institute of Optics and Mechanics to take the lead in conducting research on semiconductor laser annealing in China. On the basis of establishing the above technologies, the ion beam laboratory led by Zou Shichang conducted systematic research on the interaction between ion beams and solid materials and applied them to the modification, synthesis, processing, and analysis of materials. It has successively completed the following research Work. (1) Semiconductor ion implantation: The damage and annealing behavior of ion-implanted silicon were studied, and a new method of annealing and alloying ion-implanted semiconductors using carbon dioxide laser irradiation from the back was originally proposed. This work was awarded the 1982 Award from the Chinese Academy of Sciences Second Prize for Major Scientific and Technological Achievements of the Year. He studied the use of double ion implantation to obtain the highest carrier concentration and doping electrical activation rate in indium phosphide, and used full ion implantation technology to take the lead in developing the country's first 120-gate gallium arsenide gate array circuit and high-speed Frequency divider won the first prize of the 1990 Science and Technology Progress Award of the Chinese Academy of Sciences.
(2) SOI technology: Systematic research was conducted on SOI technology, and new SOI materials were synthesized using ion implantation and laser recrystallization methods. Solved the problem of surface quality of laser recrystallized SOI material suitable for making circuits, and obtained an invention patent. Based on an in-depth analysis of the optical effects of SOI materials, a set of non-destructive characterization techniques was proposed, and a new type of CMOS/SOI circuit was successfully developed. This project won the second prize of the 1990 Natural Science Award of the Chinese Academy of Sciences. In recent years, SOI materials have entered practical use and will become the basic technology of silicon integrated circuits in the 21st century, which illustrates Zou Shichang's far-sightedness in this new research field.
(3) Ion beam micromachining: The physical phenomena such as sputtering, damage and appearance changes caused by low-energy ion beam bombardment of the material surface were studied, and reactive ion beam micromachining was used to etch Chinese patterns on the quartz substrate. The first batch of practical blazed holographic gratings feature controllable blaze angles, stable process repeatability, and greatly improved diffraction efficiency. This is a major breakthrough in grating manufacturing technology. It won the second prize of the 1987 Science and Technology Progress Award of the Chinese Academy of Sciences and the third prize of the 1989 National Science and Technology Progress Award. Prizes.
(4) Ion beam enhanced deposition: Responsible for the national "863 High-tech Materials Field Material Surface Optimization" topic, established and mastered controllable, preset and repeatable ion beam enhanced deposition technology, synthesized It has a silicon nitride and titanium nitride film with strong adhesion to the substrate, low friction coefficient and high wear resistance.
Due to these achievements, Zou Shichang was elected as an international committee member of two major academic conferences in the international ion beam field (Ion Implantation Technology - IIT and Ion Beam Material Modification - IBMM). In 1989, he was named Shanghai Model Worker.