Pinyin: Danhua Law
English title: aluminum nitride
Molecular formula: AlN
Molecular weight: 40.99
Density: 3.235g/cm3
Description: AlN belongs to diamond-like nitride, which can be stabilized to 2200℃. The room temperature strength is high, and the strength decreases slowly with the increase of temperature. It has good thermal conductivity and low thermal expansion coefficient, and is a good thermal shock resistant material. It has strong corrosion resistance to molten metal and is an ideal crucible material for melting and casting pure iron, aluminum or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties, and it is also a promising electrical component. The aluminum nitride coating on the surface of GaAs can protect it from ion implantation during annealing. Aluminum nitride is also a catalyst for the transformation from hexagonal boron nitride to cubic boron nitride. It reacts slowly with water at room temperature. It can be synthesized from aluminum powder at 800~ 1000℃ in ammonia or nitrogen atmosphere. The product is white to gray powder blue. Or synthesized with Al2O3-C-N2 system at 1600~ 1750℃, and the product is gray powder. Or aluminum chloride and ammonia are prepared by gas phase reaction. The coating can be synthesized by vapor deposition from AlCl3-NH3 system.
1. aluminum nitride powder has high purity, small particle size and high activity, and is the main raw material for manufacturing high thermal conductivity aluminum nitride ceramic substrates.
2. Aluminum nitride ceramic substrate has high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity and low dielectric loss, and is an ideal heat dissipation substrate and packaging material for large-scale integrated circuits.
Process route: carbothermal reduction nitridation method is adopted for aluminum nitride powder; The aluminum nitride ceramic substrate with high thermal conductivity is sintered at atmospheric pressure.