He devoted himself to the research of power semiconductor technology for a long time, wrote chapters on power semiconductor devices for four famous encyclopedias or semiconductor academic series at home and abroad, was elected as a member of the technical committee of the International Conference on Power Semiconductor and Integrated Circuits (ISPSD) on 20 10, served as the chairman of the power semiconductor branch of the international academic conference for many times, and was invited to give special reports in the field of power semiconductor at the international academic conference for three times. Published more than 80 papers included in SCI and more than 200 papers included in EI. He has won 8 national and ministerial scientific research awards (including the first prize of Sichuan Science and Technology Progress Award in 2009 and the second prize of 20 10 National Science and Technology Progress Award) and more than 30 patents. At present, he leads a research team of more than 200 people (Power Integration Technology Laboratory, University of Electronic Science and Technology of China) in the fields of discrete power semiconductor devices (from high-performance diodes, bipolar transistors, power MOSFET, IGBT, radio-frequency LDMOS to MOS controlled thyristors, from silicon-based to SiC and GaN), new structures of integrated power semiconductor devices (including silicon-based, SOI-based and GaN-based), high and low voltage process integration, power management ic and power integrated circuit, digital auxiliary power integration and so on. At the same time of teaching and academic research, we have successfully developed dozens of new technologies and products in the field of power semiconductors for domestic and foreign enterprises, with sales exceeding 100 million.