Preparation of aluminum oxynitride?

Aluminum nitride (AlN) is an important wide band gap semiconductor material, which has excellent thermal conductivity and insulation properties, and is widely used in high-frequency electronic devices, LED packaging and heat sinks. The preparation process of aluminum oxynitride usually has the following methods:

1. ammonia solution:

This is a common method to prepare aluminum oxynitride. Aluminum powder reacts with ammonia at high temperature to produce aluminum oxynitride. The reaction process is as follows:

3Al + NH3 → AlN + 3/2H2

2. Reaction method of aluminum carbide and ammonia:

Aluminum carbide reacts with ammonia at high temperature to produce aluminum oxynitride. The reaction process is as follows:

Al4C3 + 12NH3 → 4AlN + 3CH4

3. Direct nitrogen hydrolysis method:

Nitrogen and hydrogen are hydrolyzed at high temperature to produce aluminum oxynitride. The reaction process is as follows:

2Al + N2 + 3H2O → 2AlN + 3H2

4. Nitrogen oxidation method:

Aluminum powder reacts with nitrogen at high temperature to produce aluminum oxynitride. The reaction process is as follows:

2 Al +N2→2 Al

Among these preparation methods, ammonolysis and the reaction of aluminum carbide with ammonia are commonly used industrial preparation methods, which can prepare high-quality aluminum oxynitride materials at relatively low temperature. However, direct nitrogen hydrolysis and nitrogen oxidation are usually used for laboratory research or small batch preparation. The choice of preparation method of aluminum oxynitride mainly depends on the application demand and production scale of the material.