Development course and preparation technology of the third generation semiconductor material silicon carbide

The third generation semiconductor materials mainly include gallium nitride (GaN) and silicon carbide (SiC), among which the crystallization processing technology of silicon carbide and gallium nitride has made remarkable achievements in mass production. In addition, with the emergence of new two-dimensional materials such as graphene and black phosphorus, and the research and development of new materials such as oxide semiconductors, it is also possible for the development of the third generation of semiconductors.

Here is a brief introduction to the development and preparation technology of silicon carbide:

Development course:

1. Early development: Silicon carbide was discovered as early as the end of 19. 1907, with the invention of the first radio equipment by Ferdinand Braun, lead-sulfur crystals began to be used to make rectifier diodes, and silicon carbide began to be applied to electronic devices.

2. Development stage: After the 1960s, the United States and other countries began to conduct in-depth research on silicon carbide materials, hoping to use this material to develop more advanced radio equipment. In 1980s and 1990s, with the mastery of silicon carbide crystal growth technology, the commercial production of silicon carbide began to be realized.

3. Modern research: Since the 20th century, the application of silicon carbide in integrated circuits, power electronics and other fields has made rapid progress and achieved a series of breakthrough results.

Preparation technology:

1. Vapor deposition (CVD) method: Vapor deposition method is a common technology for preparing silicon carbide, and substances in the gas phase are deposited on the substrate in the form of single layer or multiple layers at high temperature.

2. Physical Vapor Deposition (PVD) method: Physical vapor deposition is to transform a substance from a solid source into a gas state by physical methods (such as evaporation and sputtering), and then deposit it on a substrate to form a thin film or a multilayer film.

3.PECVD method: low-temperature plasma enhanced vapor deposition is adopted, which mainly produces silicon carbide films by refreshing the reaction gas and catalyzing the reaction with excited particles in the plasma, so as to obtain and grow high-quality silicon carbide films at low temperature.

4. Molecular beam epitaxy (MBE) method: This method belongs to ultra-high vacuum technology, and the crystal is grown by atomic beam or molecular beam of elements hitting the substrate.

5. Liquid phase epitaxial growth (LPE) method: the substrate is perfectly epitaxially grown by liquid silicon carbide solution at high temperature and high pressure.

At present, cost, efficiency and performance are the main problems to be overcome in the preparation of silicon carbide materials. But with the continuous progress of scientific research and technology, these problems are expected to be solved, and the application of silicon carbide materials in power electronics, radio frequency, optoelectronics and other fields has great development space.