Leading technology of Fujian Sanan Group Co., Ltd.

At present, the company has a high-quality expert team composed of top talents in optoelectronic technology from the United States, Taiwan, Japan and China. The company has applied for and obtained 54 invention patents and proprietary technologies, is responsible for major national "863" projects, and has a national-level postdoctoral research station and a national-level enterprise technology center.

1. In January 2003, it passed the appraisal of scientific and technological achievements of full-color ultra-high brightness LED chips. The appraisal conclusion is that: the hardware level of the project is first-class in the country, equivalent to the international contemporary level, and the industrialization level of the project is the highest level in the country and close to the international advanced level. The products The main technical indicators are leading in the country, especially the successful development and industrialization of ultra-high brightness green LED epitaxial wafers, which fill the domestic gap. It was rated as the first domestic manufacturer to realize the industrialization of this project, and its product quality is stable and reliable;

2. In April 2003, the company's "GaN-based light-emitting diode epitaxial wafer and device preparation project" was included in the 2003 Optoelectronics and New Components Special High-tech Industrialization Demonstration Project by the National Development and Reform Commission;

3 .In June 2003, the "High-brightness blue LED products and applications" project was included in the 2003 Electronic Information Industry Development Fund Project of the Ministry of Information Industry;

4. In March 2004, the "Power-type high-brightness light-emitting diodes" and packaging industrialization key technologies" project was included in the "Semiconductor Lighting Industrialization Technology Development" research project among the major projects of the "Tenth Five-Year Plan" National Science and Technology Research Plan;

5. In November 2004, the "Semiconductor Lighting High-Tech Development Project" The "Development and Industrialization of Brightness Power White Light Diode Chips" project was included in the key support projects of the Information Industry Fund in 2005 by the Ministry of Information Industry;

6. In November 2006, our company undertook the "Power Semiconductor Full Color The "chip industrialization" project was included in the "National 2006 Information Industry Enterprise Technology Progress and Industrial Upgrading Special Project" by the National Development and Reform Commission;

7. In December 2006, our company undertook the "100lm/W power type The "White LED Manufacturing Technology" project was identified by the Ministry of Science and Technology as a subject of the National High-tech Research and Development Program (863 Plan);

8. In 2007, the technology center undertook the "Ultra-high-tech manufacturing technology for TFT-LCD backlight source" project. The "Industrialization of Brightness LED Chips" project was included in the National Development and Reform Commission's major industrial science and technology projects;

9. In 2008, "The research and development and industrialization of ultra-high brightness semiconductor red light-emitting diode (LED) chips for LCD backlight sources "The project was listed as a key bidding project in 2008 by the Ministry of Information Industry;

10. In 2008, it undertook and led the municipal major science and technology plan joint project "Key Technologies and Applications of High-Efficiency Semiconductor Lighting" organized by the Municipal Science and Technology Bureau "Industrialization", to achieve the highest domestic level of industrialized power white light luminous efficiency reaching 80lm/w.

11. In 2009, the "Semiconductor Lighting Device R&D and Industrialization" project was included in the 2009 key bidding projects by the Ministry of Information Industry.