Encouraged by the "new infrastructure", the market demand for power electronic equipment is getting stronger and stronger, which adds a fire to the development of power semiconductor device industry. Huawei microelectronics, which has been deeply involved in the field of power semiconductors for many years, has also taken the lead in entering the new infrastructure track by virtue of its own advantages, boosting the development of the industry.
Over the past half century, Huawei Microelectronics has continuously broken through a number of key technologies, accelerated the domestic substitution of power semiconductor devices, and helped China's industrial base and national industrial development to become an internationally competitive power semiconductor enterprise.
Today, China microelectronics has accumulated a lot. Under the situation that the competition of low-end products in the domestic power semiconductor device market is intensified and high-end products are heavily dependent on imports, China Microelectronics has also accelerated the promotion and R&D layout of high-end products. Since 20 16, China microelectronics has been planning to produce high-performance power devices, including super junction MOSFET, CCTMOSFET, Trench FS IGBT, EHV fast recovery diode, Trench Schottky products and high-power IGBT modules.
In the next few years, with the rise of emerging industries such as new energy vehicles and 5G communications, the demand for power semiconductors is bound to continue to grow. As one of the major power semiconductor manufacturers in China, Huawei Microelectronics has a full range of power semiconductor devices. With the rapid and steady growth of domestic power semiconductor device market, Huawei microelectronics will also usher in the fast lane of development.
A strong competitor to replace imports.
As a global automobile and industrial power, China is the largest power semiconductor device market in the world. However, while the economy is developing rapidly, foreign countries are trying their best to prevent the rise of China, especially the United States, which has set obstacles to the development of high technology in China. ZTE and Huawei incidents have sounded the alarm for the development of power semiconductor industry in China. At present, China's power semiconductor market is dominated by American, European and Japanese brands, occupying an absolute advantage in the domestic market with a market share of over 60%.
Since its establishment, Huawei Microelectronics has been committed to chip manufacturing capacity building, expanding production line scale and improving chip delivery capacity. At present, there are 4-inch, 5-inch and 6-inch power semiconductor chip production lines, with an annual processing capacity of 4 million chips, and an 8-inch production line under construction, with a design capacity of 960,000 chips/year, 2.4 billion single-tube packaging resources and 65.438+0.8 million IPM module packages/year.
After more than half a century of technology accumulation, Huawei Microelectronics has a number of patents and proprietary technologies in terminal design, process manufacturing and product design, especially in IGBT wafer technology, trench technology, life control and terminal design technology, reaching the domestic leading level and the international advanced level in the same industry. Among them, the five key technologies of IGBT products, such as wafer manufacturing technology, transparent current collector IGBT manufacturing technology, vertical and horizontal structure design technology, back injection and activation technology, and silicon wafer testing technology, have all broken through difficulties and developed IGBT products with 600V-650V and1200 V-1350 V. The products adopt the international mainstream Trench-FS technology, which is mainly used in new energy electric vehicles and silicon wafers. After several generations of product development, trench MOS successfully solved the deep trench etching technology, barrier metallization deposition technology, W etching technology and so on. , and has completed the product development of 30 V-250 V
"In order to realize domestic substitution, the main difficulty facing the company at present is the acceptance of domestic semiconductor power devices by customers, mainly in new application fields and high-end application fields, which require customers to give certain opportunities and time to give domestic brands a chance to run in with customers." Hua Microelectronics said that at present, the company's main problem is to strengthen communication and improvement with customers in product application, and at the same time, develop customized products that are more suitable for application scenarios according to customers' actual application needs. This is gradually being realized. China Microelectronics products are widely used in consumer electronics, automotive electronics, power electronics, industrial control and LED lighting, and are expanding rapidly in new energy vehicles, photovoltaic inverters, rail transit and other strategic emerging fields. Is Philips, Panasonic, Hitachi, Hisense, Skyworth, Changhong and other well-known enterprises at home and abroad supporting suppliers.
Go to the high-end market segment
Under the situation that the competition of low-end products in the domestic power semiconductor device market is intensified and high-end products are heavily dependent on imports, Huawei Microelectronics has also accelerated the promotion and R&D layout of high-end products, and achieved certain results in the application of products in the fields of industry, automotive electronics, 5G and charging piles, and has been recognized by well-known domestic enterprises.
Talking about the future development, Huawei Microelectronics said that it will continue to focus on the company's traditional power semiconductor chip manufacturing, continue to enlarge and strengthen its chip manufacturing capability, vertically develop and establish an 8-inch chip production line, realize the manufacturing of high-end VDMOS and IGBT devices, meet the rapidly growing market demand, horizontally expand and establish a silicon epitaxial production line, ensure the safe supply of materials, establish a packaging and testing production line, focus on building a module production line, develop towards high voltage and high power, build a power semiconductor industrial manufacturing base, improve the power semiconductor industry chain, and accelerate the promotion of the power semiconductor industry.
"China Microelectronics will continue to give full play to the IDM advantages of independent research and development and platform construction, and constantly upgrade the performance and quality of silicon-based power devices. The company has all-power device process platforms such as IGBT, MOSFET, diode, thyristor and BJT, including products in various packaging forms such as single tube, IPM and PM. In the future, the company will still take power semiconductors as the main technology development direction, and gradually establish supporting drive IC production lines in combination with the company's market field. " Huawei Microelectronics said that the company will further upgrade the existing technology platform on medium and low voltage MOSFET, and will soon launch the second generation CCT MOSFET. Taking 100V product as an example, the on-resistance per unit area reaches 40 milliohms. Improve the product voltage level, and establish a full range of voltage platforms from10v to 250V, which are not only applied to the consumer field, but also extended to the fields of server power supply, 5G, industry, artificial intelligence, automotive electronics and so on.
In terms of high-voltage MOSFET, the second generation super-junction MOSFET products will be launched at the end of this year to further improve the durability and efficiency of this series of products, which are applied to charging piles and base station power supplies. In the next 2~3 years, we will continue to upgrade the super-junction MOS platform, adopt multi-layer epitaxial structure, and develop the third generation super-junction MOS platform to achieve the same performance as international brands. The product range covers the full range of 500V-900V and 4A-72A, which can meet the needs of products in various fields.
"FRD diodes and IGBT have always been our core products. In the next 2-3 years, we will devote ourselves to developing ultra-high voltage products for rail transit and power grids, with voltages ranging from 1.700V to 6500V V. " Huawei Microelectronics also said that in terms of trench Schottky, the company has completed the construction of trench SBD platforms for 45V, 60V and 100V products, and is developing 80V and 150V product platforms, which can meet customers' higher demand for efficiency. In addition, Huawei Microelectronics has actively laid out GaN and SiC devices, developed and produced enhanced GaNHEMT, and made it fast first. For SiC devices, 650V SBD diode products have been developed, which will be further extended to 1200V diodes and SiC MOSFET, mainly used in new energy vehicles and charging piles.
Market dividends are gradually released.
In recent years, driven by the application of power semiconductor devices in China's industrial control, automotive electronics, network communication and other fields, the demand for power semiconductor devices has continued to rise, and China's power semiconductor device market has maintained rapid and steady growth.
"Affected by the COVID-19 epidemic, the power semiconductor market will face a certain decline in 2020, and then it will usher in a rapid recovery. It is estimated that by 2022, China's power semiconductor market will reach 654.38+09.6 billion yuan, and the compound annual growth rate from 2065.438+09 to 2022 will reach 3.7%. " Huawei Microelectronics believes that the domestic market demand for power semiconductors will remain strong in the next few years.
For China Microelectronics, the sustained and steady growth of the company's profits is traceable. The company has a full range of power semiconductor devices, with the growth of market demand, the company will also usher in the fast lane of development.
From the perspective of market segment structure, the demand for industrial control, automobile and network communication will increase greatly, among which MOSFET and IGBT will be the products that benefit the most. The industry predicts that in 2022, the total market share of MOSFET and IGBT will exceed 30%, and the compound growth rate of MOSFET will be 5.4%. By 2022, the market scale will reach 36.5 billion yuan. The annual market scale of IGBT reaches 25 1 100 million yuan, with a compound growth rate of 7.4%.
"MOSFET and IGBT have become one of the most mainstream power devices, which are widely used in automotive electronics, industrial electronics, new energy vehicles, charging piles, Internet of Things, photovoltaic new energy and other fields." However, most high-end MOSFET and IGBT are imported, and only a few manufacturers such as China Microelectronics can produce them. At present, advanced production technology is basically monopolized by foreign manufacturers. The world's largest power device manufacturers are Infineon of Germany, Anson of the United States, Mitsubishi Electromechanical of Japan and so on.
At the beginning of 20 19, Huawei microelectronics plans to invest in the construction of a new power electronic device base project. This investment is mainly to build an 8-inch production line to meet the company's production of new power devices. The products produced by this project mainly include IGBT, low voltage trench MOS, super junction MOS and IC chips. The target market is the relatively blank high-and low-power semiconductor market in China at present. The downstream market of products is growing rapidly, and there is huge room for import substitution. Although the product performance and technical level of investment projects are still slightly different from those of international manufacturers, their main performance is equivalent to that of international mainstream companies, and some parameters still have certain advantages. The industry predicts that in the next few years, with the large-scale application of high-end technology products in the market and the achievement of key project indicators of new products and new fields, the overall performance of China Microelectronics will continue to grow steadily.