Three-terminal transistors are mainly divided into two categories: bipolar transistors (BJT) and field effect transistors (FET, unipolar). The transistor has three electrodes (terminals); Three electrodes (terminals) of a bipolar transistor.
Emitter, base and collector); Composed of n-type and p-type semiconductors respectively; The three poles (terminals) of a field effect transistor are source, gate and drain respectively.
Extended data:
Point contact transistor: 1945 At the end of World War II, the point contact transistor invented by shockley and others became the forerunner of human microelectronics revolution. To this end, shockley submitted a patent application for Bell's first transistor. Finally, it was authorized by the first transistor patent.
Bipolar and unipolar transistors: shockley further put forward the concept of unipolar junction transistor based on the bipolar transistor in 1952, which is called junction transistor today. Its structure is similar to pnp or npn bipolar transistor.
However, there is a depletion layer at the interface of p_n material to form a rectifying contact between the gate and the source-drain conductive channel. At the same time, the semiconductors at both ends serve as gates. The current between the source and the drain is regulated by the gate.
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