Classification can be divided into long targets, square targets and circular targets according to their shapes. Special-shaped targets can be divided into metal targets, alloy targets and ceramic compound targets according to different uses, and can also be divided into semiconductor-related ceramic targets, recording medium ceramic targets, display ceramic targets, superconducting ceramic targets and giant magnetoresistance ceramic targets according to application fields, such as microelectronic targets, magnetic recording targets, optical disk targets, precious metal targets, thin-film resistive targets, conductive film targets, surface modification targets, mask layer targets, decorative layer targets and so on. Magnetron sputtering principle of electrode target, package target and other targets: apply an orthogonal magnetic field and electric field between the sputtered target (cathode) and anode, and fill the required inert gas (generally Ar gas) in the high vacuum chamber. The permanent magnet forms a magnetic field of 250 ~ 350 gauss on the target surface, and forms an orthogonal electromagnetic field with the high-voltage electric field. Under the action of electric field, Ar gas is ionized into positive ions and electrons, and a certain negative high voltage is applied to the target. The electrons emitted from the target are affected by the magnetic field, and the ionization probability of the working gas increases, forming a high-density plasma near the cathode. Ar ions accelerate to the target surface under the Lorentz force and bombard the target surface at high speed, so that the sputtered atoms on the target follow the momentum conversion principle and fly to the substrate with high kinetic energy to deposit thin films. Magnetron sputtering is generally divided into two types: tributary sputtering and RF sputtering, in which the principle of tributary sputtering equipment is simple and the speed of sputtering metal is fast. The application of RF sputtering is more extensive. In addition to conductive materials, non-conductive materials can also be sputtered, and compound materials such as oxides, nitrides and carbides can also be prepared by reactive sputtering. If the frequency of radio frequency is increased, it will become microwave plasma sputtering, and the common method is electron cyclotron vibration (ECR) microwave plasma sputtering.
Magnetron sputtering coating target;
Metal sputtering target, alloy sputtering target, ceramic sputtering target, boride ceramic sputtering target, carbide ceramic sputtering target, fluoride ceramic sputtering target, nitride ceramic sputtering target, oxide ceramic sputtering target, selenide ceramic sputtering target, silicide ceramic sputtering target, sulfide ceramic sputtering target, telluride ceramic sputtering target, other ceramic targets, Cr-SiO ceramic target, InAs target, PbAs arsenic target.
A high-purity and high-density sputtering target includes:
Sputtering target (purity: 99.9%-99.999%)
1. metal target:
Nickel target, nickel target, titanium target, titanium target, zinc target, zinc target, chromium target, chromium target, magnesium target, niobium target, niobium target, tin target, aluminum target, AlSi target, indium target, indium target, iron target, zirconium aluminum target, zirconium aluminum target, titanium aluminum target, TiAl target, zirconium target. Metal sputtering targets such as Y, Ce, W, stainless steel, Ni-Cr, NiCr, Hf, Mo, Fe-Ni, FeNi, W, etc.
2. Ceramic target
ITO target, AZO target, magnesium oxide target, iron oxide target, silicon nitride target, silicon carbide target, titanium nitride target, chromium oxide target, zinc oxide target, zinc sulfide target, silicon dioxide target, silicon monoxide target, cerium oxide target, zirconium dioxide target, niobium pentoxide target, titanium dioxide target, zirconium dioxide target, hafnium dioxide target. Ceramic sputtering targets such as niobium pentoxide target, magnesium fluoride target, yttrium fluoride target, zinc selenide target, aluminum nitride target, silicon nitride target, boron nitride target, titanium nitride target, silicon carbide target, lithium niobate target, praseodymium titanate target, barium titanate target, lanthanum titanate target and nickel oxide target.
3. Alloy target
High purity alloy sputtering targets, such as Ni-Cr alloy targets, Ni-V alloy targets, Al-Si alloy targets, Ni-Cu alloy targets, Ti-Al alloy targets, Ni-V alloy targets, Fe-B alloy targets and Si-Fe alloy targets.