Spectrometer EquipmentNo.: HIK-SCT- 1 (1) System Brief Introduction
& ampOslash's brand-new pendulum interferometer is easy to realize fast scanning. The interferometer has high stability, small volume, compact structure and easy maintenance.
& ampOslash interferometer adopts sealed moisture-proof and dust-proof structure, which effectively reduces the requirements for the use environment.
& ampOslash high-intensity infrared light source adopts spherical reflector, which can obtain uniform and stable infrared radiation.
The design of program-controlled gain amplifier circuit, high-precision A/D conversion circuit and the application of embedded microcomputer have improved the accuracy and reliability of the instrument.
The control and data communication between & ampOslash spectrometer and computer are carried out through USB, which completely realizes plug and play.
& ampOslash universal microcomputer system, full Chinese application software, rich in content. It has complete functions of spectrogram acquisition, spectrogram conversion, spectrogram processing, spectrogram analysis and spectrogram output, which makes the operation simpler, more convenient and more flexible.
(2) Technical parameters
& ampOslash wave number range: 4400 cm- 1 ~ 600 cm- 1.
& ampOslash resolution: 2cm- 1, 4cm- 1 optional.
& ampOslash wave number accuracy: better than the set resolution 1/2.
Repeatability of & ampOslash transmittance:: 0.5%T
& ampOslash signal-to-noise ratio 100%T line: 2 100 cm or so-1, and the signal-to-noise ratio is better than 10000: 1 (effective value).
& ampOslash beam splitter: ZnSe
& ampOslash detector: MCT DTGS optional.
& ampOslash light source: high-performance air-cooled and high-efficiency spherical reflection infrared light source equipment name: four-probe tester equipment number: HIK-SCT-3 (1) System introduction.
Four-probe tester is a multi-purpose comprehensive measuring equipment based on the principle of four-probe measurement. The instrument is designed according to the national standard of "Physical Test Method of Single Crystal Silicon" and referring to the American standard A.S.T.M It is a special instrument for testing the resistivity and sheet resistance (block resistance) of semiconductor materials.
The instrument is composed of main engine, test bench, four probes and computer. The measured data can be displayed directly by the host computer or collected and analyzed by the computer, and then the test results are statistically analyzed and displayed in the form of tables and graphs.
This instrument is designed and assembled with the latest electronic technology. It has the characteristics of intuitive function selection, high measuring speed, high precision, wide measuring range, good stability, compact structure and simple operation.
(2) Scope of application
This instrument is suitable for testing the resistance performance of semiconductor materials in semiconductor material factories, semiconductor device factories, scientific research units and universities. 105
(3) resistivity of technical parameter measurement range:10-4 ~105 Ω cm; Block resistance:10-3 ~106 Ω /□ (extensible); Conductivity:10-5 ~104s/cm; Resistance:10-4 ~105ω; Measurable wafer diameter 140mmX 150mm (equipped with S-2A test bench); 200mmX200mm (equipped with S-2B test bench); 400mmX500mm (equipped with S-2C test bench); The current range of constant current source is divided into six grades: 1uA, 10uA, 100A, 10mA, 100mA, and the range and expression of digital voltmeter in each grade can be continuous between 000.00 and199.99mv. Resolution:10uv; ; Input impedance >; 1000mω； Accuracy: 0.1%; Display: four semi-red LED digital display; Automatically display polarity and overrange; Basic indexing distance of four probes:1.01mm; Insulation resistance between pins: ≥1000 mω; Mechanical deviation rate: ≤ 0.3%; Probe: tungsten carbide or high speed steel Ф ф0.5mm；; Probe pressure: 5 ~ 16 Newton (resultant force); The relative errors of analog resistance measurement are 0.0 1ω, 0. 1ω, 1ω, 10000ω≤0.3% 1 the maximum relative error measured by the whole machine (using silicon standard samples) Relative humidity: ≤ 65%; No high frequency interference; No direct glare; Name of equipment: minority carrier lifetime tester EquipmentNo.: HIK-SCT-5 (1) System Brief Introduction
The test range of minority carriers is 1μs to 6000μs, and the lower limit of resistivity of silicon material is 0.1ω cm (which can be extended to 0.01ω cm). The dynamic curve is monitored throughout the test process, and the minority carrier lifetime measurement can sensitively reflect the defects such as heavy metal pollution and trap effect on the surface of single crystal. It is a rare minority carrier lifetime measuring instrument for primary polysilicon materials and semiconductor and solar crystal pulling enterprises.
(2) Scope of application
The minority carrier lifetime tester is a powerful minority carrier lifetime tester, which is not only suitable for measuring the minority carrier lifetime of silicon wafers, but also for measuring the minority carrier lifetime of irregular shapes such as silicon rods, silicon cores, phosphorus inspection rods, boron inspection rods and seed crystals.
(3) Product features
& ampOslash has a wide range of testing, including minority carrier lifetime measurement of silicon block, silicon rod, silicon core, phosphorus probe rod, boron probe rod, seed crystal, silicon wafer and germanium single crystal.
& ampOslash is mainly used for in-and-out inspection of silicon rods, silicon cores, phosphorus inspection rods, boron inspection rods, seed crystals, silicon blocks and silicon wafers, as well as monitoring of heavy metal pollution and defects in the production process.
& ampOslash is suitable for measuring minority carrier lifetime of low resistance silicon materials, and the resistivity measurement range can reach ρ >; 0. 1Ω? Cm (can be extended to 0.0 1ω? Cm), completely solving the problem that microwave photoconductivity cannot detect low-resistance monocrystalline silicon.
The whole process of & ampOslash dynamic testing is monitored, which avoids the problems that u-PCD cannot observe the trap effect of crystalline silicon and the surface recombination effect is defective.
The penetration depth of & ampOslash is large, reaching 500 microns. Compared with the penetration depth of microwave photoconductivity of 30 microns, it truly reflects the measurement of minority carrier lifetime and avoids the interference of surface recombination effect.
& ampOslash's specially customized sample rack meets the requirements of primary polysilicon production enterprises for testing minority carrier lifetime of various shapes of silicon materials, including silicon cores, phosphorus probes and boron probes.
& ampOslash is cost-effective, and the price is much lower than that of foreign minority carrier life tester products, which greatly reduces the testing cost of enterprises.
(4) Technical parameters
& ampOslash test materials: silicon semiconductor materials-silicon rods, silicon cores, phosphorus probes, boron probes, seed crystals, silicon blocks, silicon wafers, etc. And germanium semiconductor materials.
& ampOslash minority carrier lifetime test range:1μ s-6000μ s.
The lower limit of & ampOslash's measurable low-resistance silicon material is 0. 1ω. Cm, which can be extended to 0.01ω.cm..
& ampOslash laser wavelength:1.07μ m.
Penetration depth of & ampOslash laser in monocrystalline silicon: 500μm m.
& ampOslash working frequency: 30MHz
& ampOslash low output impedance and output power >: 1W
& ampOslash power supply: ~ ~220V 50Hz power consumption
(1) system introduction
Dektak 150 integrates more than 40 years of technical accumulation and innovation, and provides a variety of optional configurations to meet the needs of users in different application directions. The fuselage frame and supporting parts made of solid aluminum significantly improve the repeatability of the instrument and reduce the interference of floor noise on measurement. The Dektak random equipment software system based on Windows XP has a friendly interface and provides users with perfect analysis functions. "One-button" operation mode makes the measurement easy. By selecting the three-dimensional imaging accessory group, the function of the instrument can also be greatly expanded.
(2) Scope of application
Probe surface profilometer (step meter) is mainly used in many fields, such as film thickness measurement, sample surface morphology measurement, film stress measurement, sample surface roughness/waviness measurement and sample surface three-dimensional morphology measurement.
(3) Main features
High repeatability of step height measurement in & ampOslash
& ampOslash Based on the precision machining of optical reference surface, the sample table ensures the stability of the baseline in long-distance scanning.
& ampOslash's excellent availability and maintainability.
& ampOslash Best Sample Applicability
& ampOslash High Resolution Roughness Measurement
& ampOslash's Powerful Software Analysis System
Functional scalability of & ampOslash 3D surface topography measurement
The wide application of & ampOslash
(4) Technical parameters
& ampOslash measurement repeatability 6
& ampOslash scanning length is 50μm-55mm.
The maximum number of data points in a single scan of & ampOslash is 60,000.
The maximum allowable height of & ampOslash samples is 100mm (it will change according to different configurations).
The vertical range of & ampOslash is 524μm (1mm optional).
The maximum vertical resolution of & ampOslash is 1? (in the range of 6.55μm)
& ampOslash sample table 150mm, X-Y-θ manual adjustment.
The pressure range of & ampOslash probe is1-15mg (0.03mg is optional).
The visual field of the & ampOslash camera microscope is 2.6mm (0.67-4.29mm optional). Name of equipment: Primary Polycrystalline Resistivity Tester. Equipment number: HIK-SCT- 10 (1) System introduction.
The original polycrystalline resistivity tester is a high-end resistivity tester, which has the characteristics of large range and super-large range, and realizes the resistivity measurement range from 0.000 1 ohm. Centimeters to tens of thousands of ohms. Cm (extensible) has the characteristics of high measurement accuracy, good stability, wide measurement range, compact structure and convenient use. It is the best helper for enterprises that produce primary polysilicon by Siemens method, silane method and other processes, enterprises that produce polysilicon by physical purification, semiconductor material factories, device factories, scientific research departments, colleges and universities, and enterprises that need ultra-large range resistivity testing.
(2) Product features
& ampOslash is suitable for enterprises that produce primary polysilicon by Siemens process and silane process.
& ampOslash is suitable for polysilicon production enterprises by physical purification.
& ampOslash is suitable for photovoltaic ingot pulling and ic semiconductor device enterprises.
& ampOslash is suitable for scientific research departments, universities and enterprises that need to measure ultra-large range resistivity.
& ampOslash has high measurement accuracy, and besides the thickness correction function, it also has the functions of temperature correction and wafer diameter correction.
& ampOslash's unique design can effectively eliminate the errors caused by measuring leads and contact resistance, and realize high precision and extremely wide measurement range.
The structure of & ampOslash double-digit word table makes the measurement more accurate and the operation simpler.
& ampOslash has powerful test data query and printing functions.
& ampOslash measurement system can realize automatic commutation measurement, average value, maximum value, minimum value, average percentage change rate and so on.
& ampOslash four-probe adopts imported ruby shaft sleeve guiding structure, which reduces the deviation rate of the probe and greatly improves the measurement repeatability.
& ampOslash adopts imported components, leaving a large safety factor, which greatly improves the reliability and service life of the tester.
& ampOslash current is measured by a highly stable special constant current source (five ten thousandths of accuracy), which is not affected by climatic conditions.
& ampOslash has positive and negative detection functions to ensure the accuracy of the test results.
& ampOslash has the performance of resisting strong magnetic field and high frequency equipment.
(3) Technical parameters
& ampOslash measurable resistivity range:10-5—1.9×1.05 Ω cm (extensible).
& ampOslash measurement accuracy
& amposlashac 220v10% 50/60hz power: 12W equipment name: contactless resistivity model tester equipmentNo.: HIK-SCT- 15 (1) System introduction.
Non-contact resistivity model tester is based on eddy current testing technology, which can test the bulk resistivity of silicon materials, silicon rods, silicon ingots and silicon wafers without contact and damage.
(2) Product features
& ampOslash's extensive testing range &; Oslash This product is small in size and easy to move and carry.
& ampOslash Measurement of Resistivity of Silicon Ingots, Bars and Return Charges by Eddy Current Method
& ampOslash Non-contact Nondestructive Rapid Testing
No surface treatment is required before & ampOslash test.
& ampOslash, especially for polycrystals, can effectively avoid the influence of grain boundaries on the test.
Optional non-contact PN model test function of & ampOslash
& ampOslash temperature and thickness can be corrected.
(3) Technical parameters
& ampOslash minimum test thickness: 200μm m.
& ampOslash measurement time: 2 seconds/time.
& ampOslash Minimum test area: 30x30 mm2
& ampOslash Recommended temperature: 20℃
& ampOslash humidity: ≤80%
& ampOslash air pressure: 86- 106 kPa
& ampOslash working voltage: 230 10V.
& ampOslash frequency, 50 3 Hz
& ampOslash power consumption: ≤5W
& ampOslash size (LxWxH):280x200x60mm Equipment name: silicon wafer defect tester EquipmentNo.: HIK-SCT- 18 (1) System introduction.
The silicon wafer defect observer is used to observe the defects of silicon wafers, and the effect is very obvious, including dislocations, stacking faults, scratches, edge cracks, etc., which can not be observed by naked eyes. Real-time image analysis, measurement and statistics to improve the use of traditional optical instruments. With the help of projectors, computers and other display and storage devices, research results can be better observed and preserved.
(2) Product features
& ampOslash is suitable for observing the defects of silicon wafer, and the effect is very obvious, including dislocation, stacking fault, scratch, edge collapse and so on. , invisible to the naked eye;
& ampOslash makes the observation of silicon wafer defects simple and accurate, and greatly reduces the intensity of this work;
& ampOslash real-time image analysis, measurement and statistics to improve the use of traditional optical instruments. With projectors, computers and other display and storage devices, research results can be better observed and preserved;
& ampOslash adopts 1/2CMOS photosensitive chip, which is small in size, advanced in technology, high in pixel, clear in imaging, delicate in lines and rich in color;
& ampOslash transmission interface is USB2.0 high-speed interface, and the software is modular.
& ampOslash has an effective resolution of 2 million pixels;
& ampOslash This software can be compatible with windows 2000 and windows XP operating systems. Equipment Name: Polysilicon Infrared Detector EquipmentNo.: HIK-SCT- 19 (1) System Brief Introduction
Infrared flaw detector is an instrument specially used to detect cracks, impurities, black spots, shadows, microcrystals and other defects in polysilicon wafer production.
(3) Product features
& ampOslash provides a powerful monitoring tool for quality control in the production of solar polysilicon wafers.
& ampOslash has high detection speed, and the average detection time of each silicon block is less than 1 min.
& ampOslashNIRVision software can analyze the four-sided flaw detection results and directly convert the results into three-dimensional model images.
& ampOslash imaging process will automatically mark the position of the contents.
& ampOslash's unique enhanced interpolation method provides a strong technical guarantee for the high-resolution impurity detection function.
& ampOslash adopts European numerical control engineering aluminum alloy material.
The surface of & ampOslash is protected by high-strength paint and electro-oxidation process.
& ampOslash system framework adopts high-quality industrial design.
All parts of & ampOslash are designed to meet the requirements of long-term high-strength use and minimum maintenance.
& ampOslash can fully detect the front, back, left and right, up and down of the silicon block by automatic or manual rotation.
& ampOslash infrared light source is controlled by AC and DC light sources, and the light intensity can be directly controlled by software. At the same time, it has the function of overheating protection.
At the same time, the software includes the management and analysis functions of impurity images.
& ampOslash's good stability and durability.
& ampOslash is best to grind the surface of flaw detection test, so it is recommended to carry out infrared flaw detection before online cutting.
& ampOslash infrared imaging light source is affected by resistivity. The lower the resistivity of the silicon block, the more infrared light it absorbs.
& ampOslash The general resistivity should not be lower than 0.5 ohm * cm, and the recommended resistivity should be above 0.8 ohm * cm.
(4) Technical parameters
■ Main detection indicators: inclusions (usually SiC), cracks, particles, etc.
■ Resistivity of silicon block: ≥0.8 ohm * cm (recommended)
■ Inspection time: average per silicon block 1 min.
■ Maximum detection depth: 200mm.
■ External frame and box
& gt size: 143x53x55
& gt The outer frame adopts numerical control engineering aluminum alloy.
& gt that out frame is an aluminum plate covered with strong electrostatic paint.
& gt Main engine weight: 98kg
& gt accessory weight: 25 kg
■ turntable
& gt Single-axis servo motor is adopted.
& gt Maximum load: 40kg
& gt has overcurrent protection to prevent damage and motor burning.
> Out-of-step, high-resolution decoder
■ Infrared light source
& gt High-intensity near-infrared halogen lamp with heating wavelength of 273mm.
& gt power: 230 V, 1000 W.
& gt Temperature: 25-60 degrees Celsius
> light intensity can be controlled by software.
& gt The software has overheat protection.
■ Observation instrument
> temperature control with infrared CCD
>12 bit analog-to-digital converter
& gt frequency: 60Hz and 100Hz.
& gt pixel spacing: 30μm
& gt resolution: 320x256 pixels
& gt Manual adjustable infrared lens