First, I took a PhD in Shandong University. My main courses are semiconductor physics and semiconductor device theory. I don't know which version of the textbook is.

Semiconductor Physics and Devices (3rd Edition) —— A Series of Foreign Electronic and Communication Textbooks

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Introduction to semiconductors and integrated circuits

history

integrated circuit

manufacture

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Chapter 65438 +0 solid lattice structure

1. 1 semiconductor material

1.2 solid type

1.3 space lattice

1.4 valence bond

* 1.5 defects and impurities in solids

* 1.6 growth of semiconductor materials

1.7 summary

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The second chapter is the preliminary study of quantum mechanics.

2. 1 Basic principles of quantum mechanics

2.2 Schrodinger wave equation

2.3 Application of Schrodinger Wave Equation

*2.4 Extension of Atomic Wave Theory

2.5 Summary

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The third chapter is the preliminary study of solid quantum theory.

3. 1 Allowed band and forbidden band

3.2 Conductivity in Solids

3.3 three-dimensional expansion

3.4 State density function

3.5 Statistical mechanics

3.6 Summary

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Chapter 4 Balanced Semiconductor

4. 1 carriers in semiconductors

4.2 Doping atoms and energy levels

4.3 extrinsic semiconductor

4.4 Statistical distribution of donors and recipients

4.5 Electric Neutral State

4.6 the position of fermi level

4.7 Summary

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Chapter 5 Carrier Transmission Phenomenon

5. 1 carrier drift motion

5.2 Carrier Diffusion

5.3 Gradient distribution of impurities

*5.4 Hall effect

5.5 Summary

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Chapter VI Unbalanced Excess Carriers in Semiconductors

6. Generation and recombination of1carriers

6.2 Characteristics of Excess Carriers

6.3 Bipolar transmission

6.4 Quasi-Fermi level

*6.5 Lifetime of Excess Carriers

*6.6 Surface effect

6.7 summary

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Chapter VII pn Junction

7. Basic structure of1pn junction

7.2 Zero bias

7.3 Anti-prejudice

*7.4 Non-uniformly doped pn junction

7.5 summary

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Chapter VIII pn junction diode

8. 1 pn junction current

Small signal model of 8.2 junction

8.3 produce? Composite current

8.4 Junction Breakdown

*8.5 Charge Storage and Diode Transient

*8.6 tunnel diode

8.7 Summary

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Chapter 9 Metal Semiconductor and Semiconductor Heterojunction

9. 1 Schottky barrier diode

9.2 metal? Semiconductor ohmic contact

9.3 Heterojunction

9.4 Summary

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Chapter 10 bipolar transistor

Working principle of 10. 1 bipolar transistor

Minority carrier distribution of 10.2

10.3 low frequency * * * base current gain

10.4 Non-ideal effect

10.5 equivalent circuit model

The upper frequency limit is 10.6.

10.7 large signal switch

* 10.8 Other bipolar transistor structures

10.9 summary

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Chapter 1 1 Metal? Oxide? Fundamentals of semiconductor field effect transistors

1 1. 1 double-ended MOS structure

1 1.2 capacitance? Voltage characteristic

Basic working principle of 1 1.3 MOSFET

1 1.4 frequency limiting characteristics

* 1 1.5 CMOS technology

1 1.6 summary

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Chapter 12 metal? Oxide? Semiconductor field effect transistor: deepening of concept

The non-ideal effect of 12. 1

12.2 MOSFET scaling theory

Correction of 12.3 threshold voltage

12.4 additional electrical characteristics

* 12.5 radiation and thermoelectric effect

12.6 summary

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Chapter 13 junction field effect transistor

13. 1 JFET concept

13.2 characteristics of the device

* 13.3 Non-ideal factors

* 13.4 equivalent circuit and frequency limitation

* 13.5 high electron mobility transistor

13.6 summary

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Chapter 14 optical equipment

14. 1 light absorption

14.2 solar cell

14.3 photodetector

14.4 Photoluminescence and Electroluminescence

14.5 photodiode

14.6 laser diode

14.7 summary

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Chapter 15 Semiconductor Power Devices

15. 1 power bipolar transistor

15.2 power MOSFET

15.3 radiator and junction temperature

15.4 thyratron

15.5 summary

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Appendix a symbol list of part parameters

Appendix B System of Units, Unit Conversion and General Constants

Appendix c periodic table of elements

Appendix d error function

Appendix E Derivation of Schrodinger Wave Equation

Appendix f energy unit-electron volt

Appendix g question reference answer

index