Directory:
Introduction to semiconductors and integrated circuits
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integrated circuit
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Chapter 65438 +0 solid lattice structure
1. 1 semiconductor material
1.2 solid type
1.3 space lattice
1.4 valence bond
* 1.5 defects and impurities in solids
* 1.6 growth of semiconductor materials
1.7 summary
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The second chapter is the preliminary study of quantum mechanics.
2. 1 Basic principles of quantum mechanics
2.2 Schrodinger wave equation
2.3 Application of Schrodinger Wave Equation
*2.4 Extension of Atomic Wave Theory
2.5 Summary
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The third chapter is the preliminary study of solid quantum theory.
3. 1 Allowed band and forbidden band
3.2 Conductivity in Solids
3.3 three-dimensional expansion
3.4 State density function
3.5 Statistical mechanics
3.6 Summary
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Chapter 4 Balanced Semiconductor
4. 1 carriers in semiconductors
4.2 Doping atoms and energy levels
4.3 extrinsic semiconductor
4.4 Statistical distribution of donors and recipients
4.5 Electric Neutral State
4.6 the position of fermi level
4.7 Summary
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Chapter 5 Carrier Transmission Phenomenon
5. 1 carrier drift motion
5.2 Carrier Diffusion
5.3 Gradient distribution of impurities
*5.4 Hall effect
5.5 Summary
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Chapter VI Unbalanced Excess Carriers in Semiconductors
6. Generation and recombination of1carriers
6.2 Characteristics of Excess Carriers
6.3 Bipolar transmission
6.4 Quasi-Fermi level
*6.5 Lifetime of Excess Carriers
*6.6 Surface effect
6.7 summary
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Chapter VII pn Junction
7. Basic structure of1pn junction
7.2 Zero bias
7.3 Anti-prejudice
*7.4 Non-uniformly doped pn junction
7.5 summary
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Chapter VIII pn junction diode
8. 1 pn junction current
Small signal model of 8.2 junction
8.3 produce? Composite current
8.4 Junction Breakdown
*8.5 Charge Storage and Diode Transient
*8.6 tunnel diode
8.7 Summary
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Chapter 9 Metal Semiconductor and Semiconductor Heterojunction
9. 1 Schottky barrier diode
9.2 metal? Semiconductor ohmic contact
9.3 Heterojunction
9.4 Summary
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Chapter 10 bipolar transistor
Working principle of 10. 1 bipolar transistor
Minority carrier distribution of 10.2
10.3 low frequency * * * base current gain
10.4 Non-ideal effect
10.5 equivalent circuit model
The upper frequency limit is 10.6.
10.7 large signal switch
* 10.8 Other bipolar transistor structures
10.9 summary
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Chapter 1 1 Metal? Oxide? Fundamentals of semiconductor field effect transistors
1 1. 1 double-ended MOS structure
1 1.2 capacitance? Voltage characteristic
Basic working principle of 1 1.3 MOSFET
1 1.4 frequency limiting characteristics
* 1 1.5 CMOS technology
1 1.6 summary
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Chapter 12 metal? Oxide? Semiconductor field effect transistor: deepening of concept
The non-ideal effect of 12. 1
12.2 MOSFET scaling theory
Correction of 12.3 threshold voltage
12.4 additional electrical characteristics
* 12.5 radiation and thermoelectric effect
12.6 summary
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Chapter 13 junction field effect transistor
13. 1 JFET concept
13.2 characteristics of the device
* 13.3 Non-ideal factors
* 13.4 equivalent circuit and frequency limitation
* 13.5 high electron mobility transistor
13.6 summary
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Chapter 14 optical equipment
14. 1 light absorption
14.2 solar cell
14.3 photodetector
14.4 Photoluminescence and Electroluminescence
14.5 photodiode
14.6 laser diode
14.7 summary
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Chapter 15 Semiconductor Power Devices
15. 1 power bipolar transistor
15.2 power MOSFET
15.3 radiator and junction temperature
15.4 thyratron
15.5 summary
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Appendix a symbol list of part parameters
Appendix B System of Units, Unit Conversion and General Constants
Appendix c periodic table of elements
Appendix d error function
Appendix E Derivation of Schrodinger Wave Equation
Appendix f energy unit-electron volt
Appendix g question reference answer
index