How about Suzhou Nengxun High Energy Semiconductor Company? Little brother 2 1 1 has a small one. I'm hesitating to sign. I want to know something about the situation. Good answer.

You can sign a contract. This company has great potential for future development and great room for personal improvement. As for treatment, welfare, overtime, holidays, etc. We can only negotiate terms with them when signing in person. The following materials are for your reference:

1. Suzhou nengxun high-energy semiconductor co., ltd was approved to undertake the key project of "strategic advanced electronic materials" 20 17.

2.2065438+On June 5, 2007, the High-tech Research and Development Center of the Ministry of Science and Technology of China issued the Notice on the Publicity of 9 Key National R&D Projects in 2065438+2007. With the strong support and recommendation of Kunshan High-tech Zone, Suzhou Nengxun High-energy Semiconductor Co., Ltd. led the "High-efficiency GaN-based power electronic technology for medium-power general power supply" to be supported by the "Special Project of Strategic Advanced Electronic Materials". The funding is 24.23 million yuan. The project consists of four topics, and the research directions include GaN power electronic devices from material growth, device preparation and industrialization, device packaging and reliability research, device application and demonstration of the whole industry chain. Led by Nengxun Semiconductor, the project consists of well-known universities and research institutes in China, such as Semiconductor Institute of Chinese Academy of Sciences, Peking University, Beijing Jiaotong University, Nanjing University and Southeast University. As well as domestic leading enterprises in GaN industry such as Jiangxi Jingneng Optoelectronics and Sanan IC, and large central enterprises such as CLP Puri Technology and Guodian New Energy, Industry-University-Research will effectively combine, and the implementation of the project will greatly promote the application of GaN materials in the field of power electronics.

3. Because of its advanced material characteristics, GaN materials have the characteristics of high efficiency, high speed and high junction temperature when applied to power electronics, and can be widely used in industrial control, power supply, electric vehicles, solar inverters and other fields. In order to keep ahead in technology, NengXun has made a lot of technical reserves in the direction of GaN power electronics. The power electronic gallium nitride diode/enhanced transistor of Nengxun Semiconductor has reached the product indexes of 200V 25A and 600V 10A respectively, and has the ability of small batch production. According to the existing technical foundation, NengXun can successfully complete the research task of this R&D key plan.